The BR1001SG-G is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has 4 diode elements and 4 terminals, with the terminals positioned on the upper side of the package. The diode type is a bridge rectifier diode with a minimum breakdown voltage of 100V and a maximum reverse voltage of 100V. The package type is R-XUFM-W4.
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Technical Specifications
Comchip BR1001SG-G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | UPPER |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 100 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Comchip BR1001SG-G Datasheet
Download the complete datasheet for Comchip BR1001SG-G to view detailed technical specifications.
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