
64Kb CMOS SRAM with 8K x 8 organization, offering 55ns access time. This asynchronous, volatile memory features a parallel interface and operates from a 4.5V to 5.5V supply. Packaged in a 28-pin SOIC (0.300 inch) for surface mounting, it supports a 13-bit address bus and 8-bit word size. Rated for operation between -40°C and 85°C, this lead-free and RoHS compliant component is suitable for various electronic applications.
Cypress CY6264-55SNXI technical specifications.
| Access Time | 55ns |
| Access Time-Max | 55ns |
| Address Bus Width | 13b |
| Package/Case | SOIC |
| Density | 64Kb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Max Operating Temperature | 85°C |
| Max Supply Current | 200mA |
| Max Supply Voltage | 5.5V |
| Memory Size | 64Kb |
| Memory Type | SDR, , Volatile, SRAM |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Number of Ports | 1 |
| Number of Words | 8000 |
| Operating Supply Voltage | 5V |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MoBL® |
| Supply Current | 260mA |
| Sync/Async | Asynchronous |
| Weight | 0.078125oz |
| Word Size | 8b |
| RoHS | Compliant |
Download the complete datasheet for Cypress CY6264-55SNXI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
