16M-bit NOR Flash memory with a parallel interface, featuring a 2M x 8 or 1M x 16 word organization and a maximum access time of 120 ns. This component operates at a typical 3.3V supply voltage, with programming voltages ranging from 2.7 to 3.6V and 8.5 to 9.5V. The memory utilizes an asynchronous timing type and a sectored architecture with a top boot block. Housed in a 48-pin Fine Pitch Ball Grid Array (FBGA) package measuring 9mm x 8mm x 0.85mm with a 0.8mm pin pitch, it supports surface mounting and operates across a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29DL163TD-12PBT-E1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
9
Package Width (mm)
8
Package Height (mm)
0.85
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
16Mbit
Interface Type
Parallel
Maximum Operating Current
15mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
2M/1M
Boot Block
Yes
Typical Operating Supply Voltage
3.3V
Address Bus Width
21/20bit
Location of Boot Block
Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29DL163TD-12PBT-E1 Datasheet
Download the complete datasheet for Cypress MBM29DL163TD-12PBT-E1 to view detailed technical specifications.
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