32M-bit NOR Flash memory with parallel interface, featuring 4M x 8 or 2M x 16 word organization and a maximum access time of 120ns. This surface-mount component operates from 3V/3.3V with a maximum operating current of 18mA and supports programming voltages from 2.7V to 3.6V and 8.5V to 9.5V. The memory architecture is sectored with asymmetrical block organization and includes a top boot block. Housed in a 57-pin Fine Pitch Ball Grid Array (FBGA) package with a 0.8mm pin pitch, it operates across a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29DL321TD-12PBT technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
57
PCB
57
Package Length (mm)
13.95
Package Width (mm)
7.95
Package Height (mm)
0.69
Seated Plane Height (mm)
1.05
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
4M/2M
Boot Block
Yes
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
22/21bit
Location of Boot Block
Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
No
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Cypress MBM29DL321TD-12PBT Datasheet
Download the complete datasheet for Cypress MBM29DL321TD-12PBT to view detailed technical specifications.
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