32M-bit NOR Flash memory, featuring a parallel interface and asynchronous timing. This surface-mount component offers 4M x 8 or 2M x 16 word organization with a maximum access time of 120 ns. It operates with a typical supply voltage of 3V or 3.3V and supports programming voltages from 2.7 to 3.6V or 8.5 to 9.5V. The memory is housed in a 57-pin Fine Pitch Ball Grid Array (FBGA) package with a 0.8mm pin pitch, suitable for operation between -40°C and 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29DL321TD-12PBT-E1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
57
PCB
57
Package Length (mm)
13.95
Package Width (mm)
7.95
Package Height (mm)
0.69
Seated Plane Height (mm)
1.05
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
4M/2M
Boot Block
Yes
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
22/21bit
Location of Boot Block
Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29DL321TD-12PBT-E1 Datasheet
Download the complete datasheet for Cypress MBM29DL321TD-12PBT-E1 to view detailed technical specifications.
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