32M-bit NOR Flash memory with a parallel interface, featuring 4M x 8 or 2M x 16 word organization and a maximum access time of 120 ns. This component operates with a typical supply voltage of 3V or 3.3V and supports programming voltages from 2.7 to 3.6V or 8.5 to 9.5V. The memory architecture is sectored with an asymmetrical block organization and includes a top boot block. Encased in a 57-pin Fine Pitch Ball Grid Array (FBGA) package, it is designed for surface mounting and operates within a temperature range of -40°C to 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29DL323TE-12PBT-E1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
57
PCB
57
Package Length (mm)
13.95
Package Width (mm)
7.95
Package Height (mm)
0.69
Seated Plane Height (mm)
1.05
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
18mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
4M/2M
Boot Block
Yes
Typical Operating Supply Voltage
3|3.3V
Address Bus Width
22/21bit
Location of Boot Block
Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29DL323TE-12PBT-E1 Datasheet
Download the complete datasheet for Cypress MBM29DL323TE-12PBT-E1 to view detailed technical specifications.
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