
32M-bit NOR Flash memory with a parallel interface, featuring 4M x 8 or 2M x 16 word organization and a maximum access time of 120 ns. This component operates with a typical supply voltage of 3V or 3.3V and supports programming voltages from 2.7 to 3.6V or 8.5 to 9.5V. The memory architecture is sectored with an asymmetrical block organization and includes a top boot block. Encased in a 57-pin Fine Pitch Ball Grid Array (FBGA) package, it is designed for surface mounting and operates within a temperature range of -40°C to 85°C.
Cypress MBM29DL323TE-12PBT-E1 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 57 |
| PCB | 57 |
| Package Length (mm) | 13.95 |
| Package Width (mm) | 7.95 |
| Package Height (mm) | 0.69 |
| Seated Plane Height (mm) | 1.05 |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 32Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 18mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|8.5 to 9.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 120ns |
| Number of Words | 4M/2M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 22/21bit |
| Location of Boot Block | Top |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 65786 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Cypress MBM29DL323TE-12PBT-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.