64M-bit NOR Flash memory with a parallel interface, organized as 4M x 16 words. Features a 120ns maximum access time and operates from a 3.3V supply. This surface-mount component is housed in a 63-pin Fine Pitch Ball Grid Array (FBGA) package, measuring 11mm x 10mm x 0.67mm. It supports programming voltages from 2.7V to 3.6V and 11.5V to 12.5V, with a typical operating current of 16mA. The memory architecture is sectored with symmetrical block organization and an asynchronous timing type, suitable for operation between -40°C and 85°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29LV652UE-12-TN-E1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
63
PCB
63
Package Length (mm)
11
Package Width (mm)
10
Package Height (mm)
0.67
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
16mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6|11.5 to 12.5V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
4M
Boot Block
No
Typical Operating Supply Voltage
3.3V
Address Bus Width
22bit
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29LV652UE-12-TN-E1 Datasheet
Download the complete datasheet for Cypress MBM29LV652UE-12-TN-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.