16M-bit NOR Flash memory, featuring a parallel interface and 120ns maximum access time. This component offers 2M x 8 or 1M x 16 word organization with a 21/20-bit address bus and 8/16-bit words per memory. It supports asynchronous timing, sectored architecture with a top boot block, and operates across a -40°C to 85°C temperature range. Packaged in a 48-pin Fine Pitch Ball Grid Array (FBGA) with a 0.8mm pin pitch, it requires surface mounting and has a maximum operating current of 25mA. Programming voltage ranges from 1.8 to 2.2V and 8.5 to 9.5V.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress MBM29SL160TD-12PBT-E1 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
9
Package Width (mm)
8
Package Height (mm)
0.85
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
16Mbit
Interface Type
Parallel
Maximum Operating Current
25mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.8 to 2.2|8.5 to 9.5V
Timing Type
Asynchronous
Maximum Access Time
120ns
Number of Words
2M/1M
Boot Block
Yes
Address Bus Width
21/20bit
Location of Boot Block
Top
Number of Bits per Word
8/16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
65786
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Cypress MBM29SL160TD-12PBT-E1 Datasheet
Download the complete datasheet for Cypress MBM29SL160TD-12PBT-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.