4M-bit NOR Flash memory with a parallel interface, featuring 512K x 8 or 256K x 16 word organization and a 90ns maximum access time. This component operates at a typical 3.3V supply voltage, with a programming voltage range of 3 to 3.6V. It is housed in a 48-pin FBGA package with a 0.8mm pin pitch, designed for surface mounting. The memory architecture is sectored with a bottom boot block, supporting 19/18-bit address bus widths and 8/16-bit words per bit. Operating temperature range is -40°C to 125°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Cypress S29AL004D90BANR21 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 8.15 |
| Package Width (mm) | 6.15 |
| Package Height (mm) | 0.76(Max) |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 4Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 16mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 3 to 3.6V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 512K/256K |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 19/18bit |
| Location of Boot Block | Bottom |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | 65786 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Cypress S29AL004D90BANR21 Datasheet
Download the complete datasheet for Cypress S29AL004D90BANR21 to view detailed technical specifications.
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