PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 3A maximum collector current and 50V collector-emitter breakdown voltage. Operates with a transition frequency of 160MHz and a minimum hFE of 82. Packaged in a SOT-89 surface-mount plastic package, this component offers a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Frequency160MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes 2DA1797-13 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-100mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
350mV
Emitter Base Voltage (VEBO)
6V
Frequency
160MHz
Gain Bandwidth Product
160MHz
Height
1.5mm
hFE Min
82
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
50V
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
160MHz
Type
General Purpose
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DA1797-13 Datasheet
Download the complete datasheet for Diodes 2DA1797-13 to view detailed technical specifications.
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