PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 32V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 1A. Operates with a transition frequency of 190MHz and a maximum power dissipation of 1W. Packaged in a SOT-89 surface-mount plastic package, this component is RoHS and REACH SVHC compliant.
Frequency190MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes 2DB1132Q-13 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
-125mV
Collector Emitter Voltage (VCEO)
32V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
-5V
Frequency
190MHz
Gain Bandwidth Product
190MHz
Height
1.5mm
Length
4.5mm
Max Breakdown Voltage
32V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
190MHz
Weight
0.001834oz
Width
2.48mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2DB1132Q-13 Datasheet
Download the complete datasheet for Diodes 2DB1132Q-13 to view detailed technical specifications.
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