PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 1.5A maximum collector current and 12V collector-emitter breakdown voltage. Operates with a 300MHz transition frequency and a minimum hFE of 270. Packaged in a 3-pin plastic SOT-323 surface-mount package, this RoHS compliant component is supplied on tape and reel.
Diodes 2DB1689-7 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 270 |
| Lead Free | Lead Free |
| Length | 2.15mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 300MHz |
| Weight | 0.000212oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes 2DB1689-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.