
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 1.5A maximum collector current and 12V collector-emitter breakdown voltage. Operates with a 260MHz gain bandwidth product and a 200mV collector-emitter saturation voltage. Packaged in a 3-pin plastic SOT-323 surface-mount case, this component offers a 150°C maximum operating temperature and is RoHS compliant.
Diodes 2DD2652-7 technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 260MHz |
| Gain Bandwidth Product | 260MHz |
| Height | 1mm |
| Length | 2.15mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 1.5A |
| Max Frequency | 260MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 260MHz |
| Weight | 0.000212oz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes 2DD2652-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.