N-Channel Metal-Oxide Semiconductor FET for switching applications. Features a 60V drain-source breakdown voltage and 115mA continuous drain current. Offers a maximum drain-source on-resistance of 7.5 Ohms. Packaged in an ultra-small SOT-523 plastic package for surface mounting. Operates across a temperature range of -55°C to 150°C.
PackageSOT-523
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes 2N7002T-7-F technical specifications.
General
Package/Case
SOT-523
Continuous Drain Current (ID)
115mA
Current Rating
115mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
4.4R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
7.5R
FET Technology
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)
20V
Height
0.75mm
Input Capacitance
50pF
JESD-30 Code
R-PDSO-G3
Lead Free
Lead Free
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
N-CHANNEL
Power Dissipation
150mW
Radiation Hardening
No
Rds On Max
7.5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Threshold Voltage
2V
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-Off Delay Time
11ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes 2N7002T-7-F Datasheet
Download the complete datasheet for Diodes 2N7002T-7-F to view detailed technical specifications.
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