
N-Channel Metal-Oxide Semiconductor FET for switching applications. Features a 60V drain-source breakdown voltage and 115mA continuous drain current. Offers a maximum drain-source on-resistance of 7.5 Ohms. Packaged in an ultra-small SOT-523 plastic package for surface mounting. Operates across a temperature range of -55°C to 150°C.
Diodes 2N7002T-7-F technical specifications.
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