DIODES

2N7002V-7

Datasheet

N-Channel MOSFET, 60V, 280mA, 7.5R, SOT-563, SM

Diodes

2N7002V-7

Name: 2N7002V-7 Diodes
Brand: Diodes
SKU: 2N7002V-7

N-Channel MOSFET, 60V, 280mA, 7.5R, SOT-563, SM

N-Channel Metal-Oxide Semiconductor FET, a dual-element JFET designed for switching applications. Features a 60V drain-source breakdown voltage and a continuous drain current of 280mA. Offers a maximum drain-source on-resistance of 7.5 Ohms. Packaged in a compact SOT-563 plastic surface-mount package, this RoHS compliant component operates from -55°C to 150°C.

PackageSOT-563

Current Rating280mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes 2N7002V-7 technical specifications.

General

Package/Case	SOT-563
Continuous Drain Current (ID)	280mA
Current Rating	280mA
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	13.5R
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	7.5R
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	0.6mm
Input Capacitance	50pF
JESD-30 Code	R-PDSO-F6
Lead Free	Lead Free
Length	1.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	N-CHANNEL
Power Dissipation	150mW
Radiation Hardening	No
Rds On Max	7.5R
RoHS Compliant	Yes
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Flat
Terminal Position	DUAL
Time @ Peak Reflow Temperature-Max (s)	10s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-Off Delay Time	20ns
Turn-On Delay Time	20ns
DC Rated Voltage	60V
Weight	0.000106oz
Width	1.2mm