N-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a 60V drain-to-source voltage (Vdss) and 115mA continuous drain current (ID). This single-element transistor offers a low Rds On of 7.5 Ohms and a turn-on delay time of 7ns. Packaged in an ultra-small SOT-323 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C.
PackageSOT-323
Current Rating115mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes 2N7002W-7 technical specifications.
General
Package/Case
SOT-323
Continuous Drain Current (ID)
115mA
Current Rating
115mA
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
2.6R
Drain to Source Voltage (Vdss)
60V
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Contains Lead
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Rds On Max
7.5R
Reach SVHC Compliant
Yes
RoHS Compliant
No
Turn-Off Delay Time
11ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Weight
0.000219oz
Width
1.35mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes 2N7002W-7 Datasheet
Download the complete datasheet for Diodes 2N7002W-7 to view detailed technical specifications.
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