2N7002W-7

N-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a 60V drain-to-source voltage (Vdss) and 115mA continuous drain current (ID). This single-element transistor offers a low Rds On of 7.5 Ohms and a turn-on delay time of 7ns. Packaged in an ultra-small SOT-323 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C.