This silicon rectifier diode is a dual-element device with a maximum reverse voltage rating of 85V and a maximum power dissipation of 150mW. It operates over a temperature range of -65°C to 150°C and features a 3-pin package. The diode is constructed from silicon and is suitable for general-purpose rectification applications.
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Technical Specifications
Diodes BAV199T-13 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 85 |
| Power Dissipation-Max | 0.15 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.70 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes BAV199T-13 Datasheet
Download the complete datasheet for Diodes BAV199T-13 to view detailed technical specifications.
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