Dual-element silicon rectifier diode with a maximum repetitive peak reverse voltage of 85V and a minimum breakdown voltage of 85V. Features a maximum forward current of 0.16A and a maximum power dissipation of 0.2W. Operating temperature range spans from -65°C to 150°C. This 3-terminal component utilizes a dual terminal position.
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Technical Specifications
Diodes BAV199WQ-7 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 85 |
| Breakdown Voltage-Min | 85 |
| Power Dissipation-Max | 0.2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes BAV199WQ-7 Datasheet
Download the complete datasheet for Diodes BAV199WQ-7 to view detailed technical specifications.
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