PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 310mW.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC807-16-7 technical specifications.
General
Package/Case
SOT-23
Collector Emitter Breakdown Voltage
45V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
Lead Free
Contains Lead
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
310mW
Reach SVHC Compliant
Yes
RoHS Compliant
No
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BC807-16-7 Datasheet
Download the complete datasheet for Diodes BC807-16-7 to view detailed technical specifications.
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