PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a maximum collector current of 500mA (0.5A I(C)). Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a compact SOT-323 surface mount plastic package with tin, matte contact plating. Operates across a wide temperature range from -65°C to 150°C.
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC807-16W-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC807-16W-7 Datasheet
Download the complete datasheet for Diodes BC807-16W-7 to view detailed technical specifications.
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