PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of -45V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Packaged in a compact SOT-323 plastic package, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
Frequency100MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC807-40W-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
-45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
250
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC807-40W-7 Datasheet
Download the complete datasheet for Diodes BC807-40W-7 to view detailed technical specifications.
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