NPN silicon bipolar junction transistor in a SOT-23 surface mount package. Features a 45V collector-emitter breakdown voltage (V(BR)CEO) and a maximum collector current (I(C)) of 800mA. Offers a transition frequency of 100MHz and a collector-emitter saturation voltage of 700mV. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC817-25-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
150V
Max Collector Current
800mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
310mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101
Transition Frequency
100MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC817-25-7-F Datasheet
Download the complete datasheet for Diodes BC817-25-7-F to view detailed technical specifications.
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