NPN Silicon Bipolar Junction Transistor for general-purpose amplification and switching. Features a 65V Collector-Emitter Voltage (VCEO) and 80V Collector-Base Voltage (VCBO). Offers a maximum collector current of 100mA and a gain bandwidth product of 300MHz. Housed in a compact SOT-23 surface-mount plastic package with a 300mW power dissipation. Operates across a wide temperature range from -65°C to 150°C.
Frequency300MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC846B-7 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 65V |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 200 |
| Length | 3.05mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Series | BC846B |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BC846B-7 Datasheet
Download the complete datasheet for Diodes BC846B-7 to view detailed technical specifications.
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