NPN Silicon Bipolar Junction Transistor for general-purpose amplification and switching. Features a 65V Collector-Emitter Voltage (VCEO) and 80V Collector-Base Voltage (VCBO). Offers a maximum collector current of 100mA and a gain bandwidth product of 300MHz. Housed in a compact SOT-23 surface-mount plastic package with a 300mW power dissipation. Operates across a wide temperature range from -65°C to 150°C.
Frequency300MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes BC846B-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
65V
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
200
Length
3.05mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
RoHS Compliant
No
Series
BC846B
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BC846B-7 Datasheet
Download the complete datasheet for Diodes BC846B-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
