NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 65V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a gain bandwidth product and transition frequency of 300MHz. Packaged in a SOT-323 plastic surface mount case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency300MHz
PackageSOT-323
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes BC846BW-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
65V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC846BW-7-F Datasheet
Download the complete datasheet for Diodes BC846BW-7-F to view detailed technical specifications.
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