NPN silicon bipolar junction transistor in a SOT-23 plastic package. Features a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and 600mV collector-emitter saturation voltage. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Designed for surface mount applications with tin, matte contact plating and operates within a temperature range of -65°C to 150°C.
Frequency300MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC847A-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
110
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC847A-7-F Datasheet
Download the complete datasheet for Diodes BC847A-7-F to view detailed technical specifications.
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