NPN Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 100MHz. Housed in an ultra-small SOT-523 plastic package for surface mounting. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-523
Current Rating100mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes BC847AT-7 technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
100MHz
Height
0.75mm
hFE Min
110
Lead Free
Contains Lead
Length
1.6mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Reach SVHC Compliant
Yes
RoHS Compliant
No
Transition Frequency
100MHz
DC Rated Voltage
45V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BC847AT-7 Datasheet
Download the complete datasheet for Diodes BC847AT-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
