NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 170MHz. Designed for surface mount with gold contact plating, operating from -55°C to 150°C. Power dissipation is rated at 435mW.
MountingSurface Mount
Power435mW
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Technical Specifications
Diodes BC847BFA-7B technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Gold |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 170MHz |
| Height | 0.35mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 0.65mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 435mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 435mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| Width | 0.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BC847BFA-7B Datasheet
Download the complete datasheet for Diodes BC847BFA-7B to view detailed technical specifications.
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