
NPN silicon bipolar junction transistor in an ultra-small SOT-523 surface mount package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW.
Diodes BC847BT-7 technical specifications.
| Package/Case | SOT-523 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.75mm |
| hFE Min | 200 |
| Lead Free | Contains Lead |
| Length | 1.6mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 50V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes BC847BT-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
