NPN silicon bipolar junction transistor for surface mount applications. Features a 45V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 420 and a transition frequency of 100MHz. Packaged in a compact DFN with gold contact plating, suitable for operation from -65°C to 150°C.
Frequency100MHz
PackageDFN
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC847CDLP-7 technical specifications.
General
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 900mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Gold |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.35mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 1.3mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BC847CDLP-7 Datasheet
Download the complete datasheet for Diodes BC847CDLP-7 to view detailed technical specifications.
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