Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. With a gain bandwidth product of 300MHz, it is suitable for high-frequency applications. The ultra-small plastic package (SOT-363) measures 2.2mm x 1.35mm x 1mm, supporting a maximum power dissipation of 200mW.
Frequency300MHz
PackageSOT-363
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes BC847PN-7 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 200 |
| Length | 2.2mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | No |
| Series | BC847P |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BC847PN-7 Datasheet
Download the complete datasheet for Diodes BC847PN-7 to view detailed technical specifications.
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