Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. With a gain bandwidth product of 300MHz, it is suitable for high-frequency applications. The ultra-small plastic package (SOT-363) measures 2.2mm x 1.35mm x 1mm, supporting a maximum power dissipation of 200mW.
Frequency300MHz
PackageSOT-363
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes BC847PN-7 technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
50V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
45V
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
200
Length
2.2mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
200mW
RoHS Compliant
No
Series
BC847P
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BC847PN-7 Datasheet
Download the complete datasheet for Diodes BC847PN-7 to view detailed technical specifications.
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