PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 plastic package. Features a 65V Collector-Emitter Voltage (VCEO) and 100mA Max Collector Current (IC). Offers a minimum DC current gain (hFE) of 125 and a Gain Bandwidth Product of 200MHz. Operates across a temperature range of -65°C to 150°C with a 300mW power dissipation. Designed for surface mount applications and supplied on tape and reel.
Frequency200MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856A-7 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 65V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 125 |
| Length | 3.05mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | BC856A |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Diodes BC856A-7 Datasheet
Download the complete datasheet for Diodes BC856A-7 to view detailed technical specifications.
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