PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 plastic package. Features a 65V Collector-Emitter Voltage (VCEO) and 100mA Max Collector Current (IC). Offers a minimum DC current gain (hFE) of 125 and a Gain Bandwidth Product of 200MHz. Operates across a temperature range of -65°C to 150°C with a 300mW power dissipation. Designed for surface mount applications and supplied on tape and reel.
Frequency200MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856A-7 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
65V
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
125
Length
3.05mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
No
Series
BC856A
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Diodes BC856A-7 Datasheet
Download the complete datasheet for Diodes BC856A-7 to view detailed technical specifications.
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