PNP silicon bipolar junction transistor for surface mount applications. Features a 65V collector-emitter breakdown voltage, 100mA max collector current, and 125 minimum hFE. Operates across a wide temperature range from -65°C to 150°C with a 200mW max power dissipation. Packaged in a compact SOT-363 plastic case, this RoHS and Lead Free compliant component offers a 100MHz transition frequency.
PackageSOT-363
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856AS-7 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 125 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BC856AS-7 Datasheet
Download the complete datasheet for Diodes BC856AS-7 to view detailed technical specifications.
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