Diodes
BC856B-13-F
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856B-13-F technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Continuous Collector Current
-100mA
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
200MHz
hFE Min
220
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
350mW
Mount
Surface Mount
Package Quantity
10000
Packaging
Tape and Reel
Polarity
PNP
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BC856B
Transition Frequency
200MHz
Compliance
RoHS
Compliant
Datasheet
Diodes BC856B-13-F Datasheet
Download the complete datasheet for Diodes BC856B-13-F to view detailed technical specifications.
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