PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 65V Collector Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current (IC). Operates with a 200MHz Gain Bandwidth Product (fT) and offers a minimum hFE of 220. Packaged in a SOT-23 surface mount plastic package, this RoHS compliant component is supplied on tape and reel.
Frequency200MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856B-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
220
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
200MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC856B-7-F Datasheet
Download the complete datasheet for Diodes BC856B-7-F to view detailed technical specifications.
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