PNP silicon bipolar junction transistor in a SOT-323 plastic package. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 65V. Offers a gain bandwidth product of 200MHz and a minimum hFE of 220. Operates across a temperature range of -65°C to 150°C with a power dissipation of 200mW. Designed for surface mounting, this component is supplied on tape and reel.
Frequency200MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856BW-7 technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 65V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| hFE Min | 220 |
| Length | 2.2mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | No |
| Series | BC856B |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BC856BW-7 Datasheet
Download the complete datasheet for Diodes BC856BW-7 to view detailed technical specifications.
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