PNP silicon bipolar junction transistor in a SOT-323 plastic package. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 65V. Offers a gain bandwidth product of 200MHz and a minimum hFE of 220. Operates across a temperature range of -65°C to 150°C with a power dissipation of 200mW. Designed for surface mounting, this component is supplied on tape and reel.
Frequency200MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC856BW-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
65V
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
220
Length
2.2mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
RoHS Compliant
No
Series
BC856B
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BC856BW-7 Datasheet
Download the complete datasheet for Diodes BC856BW-7 to view detailed technical specifications.
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