PNP silicon bipolar junction transistor in an ultra-small, leadless DFN package. Features a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and a 200MHz gain bandwidth product. This surface mount transistor offers a minimum hFE of 220 and operates across a wide temperature range from -55°C to 150°C. With 250mW power dissipation and gold contact plating, it is RoHS and REACH SVHC compliant.
Frequency100MHz
PackageDFN
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Diodes BC857BLP-7 technical specifications.
General
Package/Case
DFN
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
650mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Contact Plating
Gold
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
200MHz
Height
1.5mm
hFE Min
220
Lead Free
Lead Free
Length
1mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-50V
Width
0.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC857BLP-7 Datasheet
Download the complete datasheet for Diodes BC857BLP-7 to view detailed technical specifications.
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