PNP silicon bipolar junction transistor, featuring a 45V collector-emitter voltage (VCEO) and 100mA maximum collector current. This dual-element transistor offers a 100MHz gain bandwidth product and a minimum hFE of 220. Encased in an ultra-small SOT-363 plastic package for surface mounting, it operates across a temperature range of -55°C to 125°C with a 200mW power dissipation.
Frequency100MHz
PackageSOT-363
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC857BS-7 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| hFE Min | 220 |
| Length | 2.2mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| RoHS Compliant | No |
| Series | BC857BS |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BC857BS-7 Datasheet
Download the complete datasheet for Diodes BC857BS-7 to view detailed technical specifications.
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