PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 100mA. Operates with a 200MHz gain bandwidth product and a 200mW power dissipation. Packaged in a SOT-323 surface mount plastic package, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency200MHz
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Diodes BC857CW-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-45V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC857CW-7-F Datasheet
Download the complete datasheet for Diodes BC857CW-7-F to view detailed technical specifications.
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