PNP silicon bipolar junction transistor in a SOT-323 plastic package. Features a 30V collector-emitter breakdown voltage (VCEO) and a 100mA maximum collector current (IC). Offers a 200MHz transition frequency and 200mW power dissipation. Designed for surface mount applications with tin, matte contact plating. Operates across a wide temperature range from -65°C to 150°C.
Frequency200MHz
PackageSOT-323
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC858CW-7-F technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1mm |
| Length | 2.2mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BC858CW-7-F Datasheet
Download the complete datasheet for Diodes BC858CW-7-F to view detailed technical specifications.
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