
PNP silicon bipolar junction transistor, surface mount, SOT-223 package. Features 60V collector-emitter breakdown voltage, 1A maximum collector current, and 150MHz transition frequency. Offers 2W power dissipation, -500mV collector-emitter saturation voltage, and 5V emitter-base voltage. Operates from -55°C to 150°C, RoHS and SVHC compliant.
Diodes BCP5216TA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 125MHz |
| Height | 1.65mm |
| Length | 6.55mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000282oz |
| Width | 3.55mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BCP5216TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
