NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 30V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a transition frequency of 170MHz and a maximum power dissipation of 330mW. Packaged in a compact SOT-23 (TO-236-3) surface mount package, this lead-free and RoHS compliant component is supplied on tape and reel.
PackageTO-236-3
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCV27TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 170MHz |
| DC Rated Voltage | 30V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BCV27TA Datasheet
Download the complete datasheet for Diodes BCV27TA to view detailed technical specifications.
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