NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 30V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a transition frequency of 170MHz and a maximum power dissipation of 330mW. Packaged in a compact SOT-23 (TO-236-3) surface mount package, this lead-free and RoHS compliant component is supplied on tape and reel.
PackageTO-236-3
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCV27TA technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector-emitter Voltage-Max
1V
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
10V
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
30V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
RoHS Compliant
Yes
Transition Frequency
170MHz
DC Rated Voltage
30V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCV27TA Datasheet
Download the complete datasheet for Diodes BCV27TA to view detailed technical specifications.
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