PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 500mA Continuous Collector Current (IC). This surface mount device is housed in a compact SOT-23 package with 3 pins and offers a transition frequency of 200MHz. Operating temperature range spans from -55°C to 150°C.
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BCV46TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Continuous Collector Current
-500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
10V
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCV46TA Datasheet
Download the complete datasheet for Diodes BCV46TA to view detailed technical specifications.
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