NPN bipolar junction transistor in SOT-23 package, featuring a 60V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a 170MHz transition frequency and a maximum power dissipation of 330mW. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
PackageSOT-23
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCV47TA technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
10V
Height
1.1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
170MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCV47TA Datasheet
Download the complete datasheet for Diodes BCV47TA to view detailed technical specifications.
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