NPN bipolar junction transistor in SOT-23 package, featuring a 60V collector-emitter breakdown voltage and 500mA continuous collector current. This surface-mount silicon transistor offers a 170MHz transition frequency and a maximum power dissipation of 330mW. Operating across a temperature range of -55°C to 150°C, it is RoHS and REACH SVHC compliant.
Diodes BCV47TC technical specifications.
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