PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage and a continuous collector current of -500mA. This surface mount device, housed in a SOT-23 (TO-236-3) package, offers a transition frequency of 100MHz and a maximum power dissipation of 330mW. Operating temperature range spans from -55°C to 150°C.
PackageTO-236-3
Current Rating-800mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BCX17TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 620mV |
| Continuous Collector Current | -500mA |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BCX17TA Datasheet
Download the complete datasheet for Diodes BCX17TA to view detailed technical specifications.
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