NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 80V Collector-Base Voltage (VCBO). Offers a continuous collector current of 800mA and a maximum power dissipation of 1W. Housed in a TO-92 compatible E-Line package with tin, matte contact plating. Operates across a temperature range of -55°C to 200°C and is RoHS compliant.
PackageTO-92-3
Current Rating800mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes BCX38C technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.25V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.25V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 800mA |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.83mm |
| hFE Min | 5000 |
| Lead Free | Lead Free |
| Length | 4.78mm |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
| Width | 3.66mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BCX38C Datasheet
Download the complete datasheet for Diodes BCX38C to view detailed technical specifications.
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