PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a maximum Collector Current (IC) of 1A. Operates with a 150MHz Gain Bandwidth Product and a 1W Power Dissipation. Packaged in a SOT-89 surface-mount plastic package, this 1-element transistor offers a wide operating temperature range from -65°C to 150°C.
Frequency150MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BCX5110TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
Length
4.5mm
Max Breakdown Voltage
45V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Reach SVHC Compliant
Yes
RoHS Compliant
No
Transition Frequency
150MHz
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BCX5110TA Datasheet
Download the complete datasheet for Diodes BCX5110TA to view detailed technical specifications.
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