PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a maximum Collector Current (IC) of 1A. Operates with a 150MHz Gain Bandwidth Product and a 1W Power Dissipation. Packaged in a SOT-89 surface-mount plastic package, this 1-element transistor offers a wide operating temperature range from -65°C to 150°C.
Frequency150MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BCX5110TA technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 150MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BCX5110TA Datasheet
Download the complete datasheet for Diodes BCX5110TA to view detailed technical specifications.
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