
PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-89 surface mount package. Features a 45V Collector Emitter Breakdown Voltage (VCEO) and a maximum collector current of 1A. Offers a gain bandwidth product of 150MHz with a transition frequency of 150MHz. Maximum power dissipation is 1W, operating temperature range from -65°C to 150°C. Compliant with RoHS and REACH SVHC standards.
Diodes BCX51TA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BCX51TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
