PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a maximum Collector Current (IC) of 1A. Operates with a 150MHz transition frequency and a 1W power dissipation. Packaged in a SOT-89 surface-mount plastic package with tin-matte plating. Compliant with RoHS and REACH SVHC standards.
Frequency150MHz
PackageSOT-89
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes BCX5216TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
Lead Free
Contains Lead
Length
4.5mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1W
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-60V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCX5216TA Datasheet
Download the complete datasheet for Diodes BCX5216TA to view detailed technical specifications.
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