
PNP Silicon Bipolar Junction Transistor, 1A max collector current, 80V collector-emitter breakdown voltage, and 150MHz transition frequency. Features a 1W power dissipation, 100V collector-base voltage, and 5V emitter-base voltage. Packaged in a SOT-89 surface mount plastic package with tin, matte contact plating. Operating temperature range from -65°C to 150°C.
Diodes BCX5310TA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.5mm |
| Length | 4.5mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 150MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes BCX5310TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
